Researchers have developed a voltage-controlled magnetization switching technology for MRAM devices, aiming to reduce energy consumption during data writing. This innovation could lead to a more efficient and scalable memory solution for future computing applications.
Researchers have developed a technology for voltage-controlled magnetization switching, which has the potential to be implemented in next-generation computational memory. This advanced technology enables low-energy data writing operations with non-volatility, making it scalable for future applications that require stable and reliable memory.
"As MRAM devices rely on a non-volatile magnetization state rather than a volatile charge state in capacitors, they are a promising alternative to DRAM in terms of their low power consumption in the standby state," explains Takamasa Usami, lead author of the study. The researchers also demonstrated that two different magnetic state can be reliably realized at zero electric field by changing the sweeping operation of the electric field. This means a non-volatile binary state can be intentionally achieved at zero electric field.
Takamasa Usami, Yuya Sanada, Shumpei Fujii, Shinya Yamada, Yu Shiratsuchi, Ryoichi Nakatani, Kohei Hamaya.Until now, researchers have been limited in developing photonic memory for AI processing -- gaining one important attribute like speed while sacrificing another like energy usage. An international ...
COMPUTATIONAL MEMORY MRAM MAGNETORESISTIVE RAM ENERGY EFFICIENCY NON-VOLATILE MEMORY
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