Scientists have developed the first electrically pumped continuous-wave semiconductor laser composed exclusively of elements from the fourth group of the periodic table -- the 'silicon group'.
Scientists have developed the first electrically pumped continuous-wave semiconductor laser composed exclusively of elements from the fourth group of the periodic table -- the 'silicon group'. Built from stacked ultrathin layers of silicon germanium-tin and germanium-tin, this new laser is the first of its kind directly grown on a silicon wafer, opening up new possibilities for on-chip integrated photonics.
In recent years, significant progress has been made in monolithically integrating optically active components on silicon chips. Key components, including high-performance modulators, photodetectors, and waveguides have been developed. However, a long-standing challenge has been the lack of an efficient, electrically pumped light source using only Group IV semiconductors.
Grown on standard silicon wafers like those used for silicon transistors, it represents the first truly"usable" Group IV laser, though further optimizations are needed to further reduce the lasing threshold and achieve room-temperature operation. However, the success of earlier optically pumped germanium-tin lasers, which have evolved from cryogenic to room-temperature operation in only few years, suggests a clear path forward.
The research group, led by Dr. Buca from Forschungszentrum Jülich's PGI-9, has been pioneering tin-based Group IV alloys for years, collaborating with partners such as IHP, the University of Stuttgart, CEA-Leti, C2N-Université Paris-Sud, and Politecnico di Milano. They have already demonstrated the potential for applications in photonics, electronics, thermoelectric, and spintronics.
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