LLNL to Drive Next-Generation EUV Lithography with BAT Laser

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LLNL to Drive Next-Generation EUV Lithography with BAT Laser
EUV LithographyBEUVBAT Laser

Lawrence Livermore National Laboratory (LLNL) is pushing the boundaries of EUV lithography with its Big Aperture Thulium (BAT) laser. This project aims to increase EUV source efficiency by 10 times, paving the way for a 'beyond EUV' (BEUV) lithography system.

LLNL has long pioneered the development of EUV lithography, including early spectroscopic studies that formed the foundation of plasma-based EUV sources. A California-based laboratory is set to lay the groundwork for the next evolution of extreme ultraviolet (EUV) lithography. Led by Lawrence Livermore National Laboratory (LLNL), the project aims for the next evolution of EUV lithography, centered around the lab-developed driver system named the Big Aperture Thulium (BAT) laser.

The LLNL-led project will test the BAT laser’s ability to increase EUV source efficiency by about 10 times when compared to carbon dioxide (CO2) lasers, the current industry standard, according to the lab. LLNL maintains that this could lead to a next-generation “beyond EUV” (BEUV) lithography system producing chips that are smaller, more powerful, and faster to manufacture while using less electricity. “Our work has already had quite an impact in the EUV lithography community, so now we’re excited to take this next step,” added Reagan. The BAT laser works by firing at tens of thousands of droplets of tin per second. The laser heats the droplets, each measuring about 30 millionths of a meter, to half a million degrees centigrade to produce a plasma that generates ultraviolet light with a wavelength of 13.5 nanometers. This ultraviolet light is used to create patterns on semiconductor wafers

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EUV Lithography BEUV BAT Laser Semiconductor Manufacturing Lawrence Livermore National Laboratory

 

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