The search for next-generation memory storage devices unravels a physics mystery. A multinational group of scientists has made progress in the use of antiferromagnetic materials in memory storage devices. Antiferromagnets are materials with an internal magnetic field induced by electron spin but
in the UK have suggested an explanation for the ‘Hall effect’ in a Weyl antiferromagnet , a material which has a particularly strong spontaneous Hall effect., have implications for both ferromagnets and antiferromagnets – and therefore for next-generation memory storage devices overall.
Mn3Sn piqued the researchers’ attention since it is not a perfect antiferromagnet but does have a weak external magnetic field. The researchers sought to know whether the Hall effect was caused by this weak magnetic field., who is also a co-author of the study, in their experiment. The device may be used to provide a variable amount of stress to the material being tested.
If the magnetic field were driving the Hall effect, there would be a corresponding effect on the voltage across the material. The researchers showed that, in fact, the voltage does not change substantially, proving that the magnetic field is not important. Instead, they concluded, that the arrangement of spinning electrons within the material is responsible for the Hall effect.
Clifford Hicks, a co-author of the paper at the University of Birmingham, said: “These experiments prove that the Hall effect is caused by the quantum interactions between conduction electrons and their spins. The findings are important for understanding – and improving – magnetic memory technology.”
Reference: “Piezomagnetic switching of the anomalous Hall effect in an antiferromagnet at room temperature” by M. Ikhlas, S. Dasgupta, F. Theuss, T. Higo, Shunichiro Kittaka, B. J. Ramshaw, O. Tchernyshyov, C. W. Hicks, and S. Nakatsuji, 18 August 2022,
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