Remote epitaxy has been gaining attention in the field of semiconductor manufacturing for growing thin films that copy the crystal structure of the template, which can later be exfoliated to form freestanding membranes. However, harsh epitaxy conditions can often cause damage to the template materials, such as in the case of remote epitaxy of GaN thin films, promising materials for light-emitting diodes, photodetectors, and power electronic devices, on graphene/AlN templates.
GaN remote heteroepitaxy has not been achieved by a standard metal–organic chemical vapor deposition technique due to the high temperatures involved in the process. It has been reported that graphene placed on a substrate in an extreme environment such as high temperature or use of an active gas in MOCVD gets damaged due to chemical instability, which causes failure to exfoliate grown GaN films.
on graphene/AlN templates by MOCVD and investigated the effect of surface pits in AlN on the growth and exfoliation of these thin films.The researchers first performed an annealing test at 950 °C for 5 minutes to check the thermal stability of graphene on AlN. Based on its results, they developed a two-step process to grow GaN thin films on the template by MOCVD.
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