Infineon has created the world’s first 300 mm GaN wafer technology, boosting the GaN semiconductor market.
The company has succeeded in manufacturing 300 mm GaN wafers on an integrated pilot line in existing 300 mm silicon production in its power fab in Villach. A Germany-based global semiconductor leader has developed the the world’s first 300 mm power gallium nitride wafer technology . Infineon Technologies claims that the company is first company in the world to master this groundbreaking technology in an existing and scalable high-volume manufacturing environment.
Infineon maintains that the chip production on 300 mm wafers is technologically more advanced and significantly more efficient compared to 200 mm wafers, since the bigger wafer diameter fits 2.3 times as many chips per wafer.semiconductors find fast adoption in industrial, automotive, and consumer, computing & communication applications including power supplies for AI systems, solar inverters, chargers and adapters, and motor-control systems.
Hanebeck stated that the technological breakthrough will be an industry game-changer and enable us to unlock the full potential of gallium nitride. is mastering all three relevant materials: silicon, silicon carbide and gallium nitride,” added Hanebeck.The company has succeeded in manufacturing 300 mm GaN wafers on an integrated pilot line in existing 300 mm silicon production in its power fab in Villach .in the existing production of 300 mm silicon and 200 mm GaN. Infineon will further scale GaN capacity aligned with market needs.
Infineon Technologies Wafer Technology
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