GaN-VCSELs Hit New Milestones: Japanese Researchers Achieve Unprecedented Resonance Control

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GaN-VCSELs Hit New Milestones: Japanese Researchers Achieve Unprecedented Resonance Control
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The gallium nitride purple surface-emitting laser with a power conversion efficiency of more than 20%. Credit: Tetsuya Takeuchi / Meijo University

Gallium nitride vertical-cavity surface-emitting lasers are semiconductor laser diodes with promising applications in various fields, including adaptive headlights, retinal scanning displays, point-of-care testing systems, and high-speed visible light communication systems. Their high efficiency and low manufacturing costs make them especially appealing for these applications.

Moreover, the traditional cavity length control method, which involves pre-experiments with test cavity layers for the determination of their growth rate, results in an error between the estimated and final thickness of the VCSEL cavity. This error could lead to resonance wavelengths being out of the narrow stop bandwidth of the AlInN/GaN DBR, significantly affecting performance.

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